C2229 Transistor NPN TO-92. C2229 Transistor NPN Price.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 

Features:

• High breakdown voltage: VCEO = 150 V (min)
• Low output capacitance: Cob = 5.0 pF (max)
• High transition frequency: fT = 120 MHz (typ.)

Specification: 

• Collector-base voltage VCBO: 200 V
• Collector-emitter voltage VCEO: 150 V
• Emitter-base voltage VEBO: 5 V
• Collector current IC 50 mA
• Base current IB 20 mA
• Collector power dissipation PC 800 mW
• Junction temperature: Tj 150 °C
• Storage temperature range Tstg −55 to 150 °C 

Download C2229 datasheet pdf.