NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS5350T.
plastic, surface-mounted package; 3 terminals; 1.9 mm
pitch; 2.9 mm x 1.3 mm x 1 mm body
Features :
- Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
- High collector current capability
- High collector current gain
- Improved efficiency due to reduced heat generation
- Type number: PBSS4350T
- Marking code: ZCW
Applications :
- Power management applications
- Low and medium power DC/DC converters
- Supply line switching
- Battery chargers
- Linear voltage regulation with low voltage drop-out (LDO)
ZCW Transistor Pinout :
Limiting values :
- VCBO collector-base voltage open emitter - 50 V
- VCEO collector-emitter voltage open base - 50 V
- VEBO emitter-base voltage open collector - 5 V
- IC collector current - 2 A
- ICRM repetitive peak collector
current
δ ≤ 0.25; tp ≤ 100 ms - 3 A
- ICM peak collector current single pulse; tp ≤ 1 ms - 5 A
- IB base current - 0.5 A
- Tj
junction temperature - 150 °C
- fT transition frequency: 100 - MHz